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VNH2SP30 データシート(PDF) 9 Page - STMicroelectronics

部品番号 VNH2SP30
部品情報  AUTOMOTIVE FULLY INTEGRATED H-BRIDGE MOTOR DRIVER
Download  26 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNH2SP30 データシート(HTML) 9 Page - STMicroelectronics

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VNH2SP30-E
Table 16. Electrical Transient Requirements
Reverse Battery Protection
Three possible solutions can be thought of:
a) a Schottky diode D connected to VCC pin
b) a N-channel MOSFET connected to the GND
pin (see Typical Application Circuit on page 8)
c) a P-channel MOSFET connected to the VCC pin
The device sustains no more than -30A in reverse
battery conditions because of the two Body diodes
of the Power MOSFETs. Additionally, in reverse
battery condition the I/Os of VNH2SP30-E will be
pulled down to the VCC line (approximately -1.5V).
Series resistor must be inserted to limit the current
sunk from the microcontroller I/Os. If IRmax is the
maximum target reverse current through
µC I/Os,
series resistor is:
ISO T/R
7637/1
Test Pulse
Test Level
I
Test Level
II
Test Level
III
Test Level
IV
Test Levels
Delays and Impedance
1
-25V
-50V
-75V
-100V
2ms, 10
2
+25V
+50V
+75V
+100V
0.2ms, 10
3a
-25V
-50V
-100V
-150V
0.1
µs, 50Ω
3b
+25V
+50V
+75V
+100V
0.1
µs, 50Ω
4
-4V
-5V
-6V
-7V
100ms, 0.01
5
+26.5V
+46.5V
+66.5V
+86.5V
400ms, 2
ISO T/R
7637/1
Test Pulse
Test Levels Result
I
Test Levels Result
II
Test Levels Result
III
Test Levels Result
IV
1
CC
C
C
2
CC
C
C
3a
CC
C
C
3b
CC
C
C
4
CC
C
C
5
CE
E
E
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
R
V
IO s
V
CC
I
Rm ax
---------------------------------
=


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