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VNH2SP30 データシート(PDF) 9 Page - STMicroelectronics |
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VNH2SP30 データシート(HTML) 9 Page - STMicroelectronics |
9 / 26 page 9/26 VNH2SP30-E Table 16. Electrical Transient Requirements Reverse Battery Protection Three possible solutions can be thought of: a) a Schottky diode D connected to VCC pin b) a N-channel MOSFET connected to the GND pin (see Typical Application Circuit on page 8) c) a P-channel MOSFET connected to the VCC pin The device sustains no more than -30A in reverse battery conditions because of the two Body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of VNH2SP30-E will be pulled down to the VCC line (approximately -1.5V). Series resistor must be inserted to limit the current sunk from the microcontroller I/Os. If IRmax is the maximum target reverse current through µC I/Os, series resistor is: ISO T/R 7637/1 Test Pulse Test Level I Test Level II Test Level III Test Level IV Test Levels Delays and Impedance 1 -25V -50V -75V -100V 2ms, 10 Ω 2 +25V +50V +75V +100V 0.2ms, 10 Ω 3a -25V -50V -100V -150V 0.1 µs, 50Ω 3b +25V +50V +75V +100V 0.1 µs, 50Ω 4 -4V -5V -6V -7V 100ms, 0.01 Ω 5 +26.5V +46.5V +66.5V +86.5V 400ms, 2 Ω ISO T/R 7637/1 Test Pulse Test Levels Result I Test Levels Result II Test Levels Result III Test Levels Result IV 1 CC C C 2 CC C C 3a CC C C 3b CC C C 4 CC C C 5 CE E E Class Contents C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device are not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. R V IO s V CC – I Rm ax --------------------------------- = |
同様の部品番号 - VNH2SP30 |
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同様の説明 - VNH2SP30 |
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