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NTE2414 データシート(PDF) 1 Page - NTE Electronics |
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NTE2414 データシート(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE2414 (NPN) & NTE2415 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 10k Resistors (Surface Mount) Features: D Built–In Bias Resistors D Small SOT–23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO 50V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, VCEO 50V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC Continuous 100mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 200mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Dissipation, PC 200mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 µA ICEO VCE = 40V, IB = 0 – – 0.5 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 170 250 330 µA DC Current Gain hFE VCE = 5V, IC = 10mA 50 – – Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 50 – – V Collector–Emitter Breakdown Voltage V(BR)CBO IC = 100µA, RBE = ∞ 50 – – V Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 0.5mA – 0.1 0.3 V Current Gain–Bandwidth Product NTE2414 fT VCE = 10V, IC = 5mA – 250 – MHz NTE2415 – 200 – MHz |
同様の部品番号 - NTE2414 |
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同様の説明 - NTE2414 |
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