TSM4NC60CI datasheet(3/6 Pages) TSC

部品番号	TSM4NC60CI

部品情報	Advanced planar process

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メーカー	TSC [Taiwan Semiconductor Company, Ltd]

ホームページ	http://www.taiwansemi.com

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TSM4NC60CI

Taiwan Semiconductor

3

Version: A1606

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-Source Voltage

VGS, Gate to Source Voltage (V)

VDS, Drain to Source Voltage (V)

ID, Drain Current (A)

Qg, Gate Charge (nC)

TJ, Junction Temperature (°C)

VGS, Gate to Source Voltage (V)

0

0.5

1

1.5

2

2.5

3

-75

-50

-25

0

25

50

75

100

125

150

V

GS=10V

I

D=1.3A

0

2

4

6

8

10

0

5

10

15

20

V

DS=480V

I

D=2.5A

0

1

2

3

4

0

2

4

6

8

25℃

-55℃

150℃

0

0.5

1

1.5

2

2.5

3

0

2

4

6

8

10

V

GS=10V

V

GS=9V

V

GS=8V

V

GS=7V

V

GS=6V

V

GS=5V

V

GS=4V

0

0.5

1

1.5

2

2.5

3

0

1

2

3

4

V

GS=10V

0

0.5

1

1.5

2

2.5

3

5

6

7

8

9

10

I

D=1.3A

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