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TSM089N08LCR データシート(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM089N08LCR データシート(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  TSM089N08LCR Taiwan Semiconductor 2 Version: A1608 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 80 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 1 1.9 2.5 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 80V IDSS -- -- 1 µA VGS = 0V, VDS = 80V TJ = 125°C -- -- 100 Drain-Source On-State Resistance (Note 3) VGS = 10V, ID = 12A RDS(on) -- 6.4 8.9 m Ω VGS = 4.5V, ID = 12A -- 8 11 Forward Transconductance (Note 3) VDS = 5V, ID = 12A gfs -- 49 -- S Dynamic (Note 4) Total Gate Charge VGS = 10V, VDS = 40V, ID = 12A Qg -- 90 -- nC Total Gate Charge VGS = 4.5V, VDS = 40V, ID = 12A Qg -- 45 -- Gate-Source Charge Qgs -- 16 -- Gate-Drain Charge Qgd -- 23 -- Input Capacitance VGS = 0V, VDS = 40V f = 1.0MHz Ciss -- 6119 -- pF Output Capacitance Coss -- 304 -- Reverse Transfer Capacitance Crss -- 116 -- Gate Resistance f = 1.0MHz Rg 0.5 1.5 3 Ω Switching (Note 4) Turn-On Delay Time VGS = 10V, VDS = 40V, ID = 12A, RG = 2Ω td(on) -- 8 -- ns Turn-On Rise Time tr -- 21 -- Turn-Off Delay Time td(off) -- 45 -- Turn-Off Fall Time tf -- 24 -- Source-Drain Diode Forward Voltage (Note 3) VGS = 0V, IS = 12A VSD -- -- 1 V Reverse Recovery Time IS = 12A , dI/dt = 100A/ μs trr -- 33 -- ns Reverse Recovery Charge Qrr -- 35 -- nC Notes: 1. Silicon limited current only. 2. L = 0.3mH, VGS = 10V, VDD = 30V, RG = 25Ω, IAS = 36A, Starting TJ = 25°C 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM089N08LCR RLG PDFN56 2,500pcs / 13 ”Reel |
同様の部品番号 - TSM089N08LCR |
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同様の説明 - TSM089N08LCR |
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