TSM089N08LCR datasheet(4/6 Pages) TSC

部品番号	TSM089N08LCR

部品情報	Low gate charge for fast power switching

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メーカー	TSC [Taiwan Semiconductor Company, Ltd]

ホームページ	http://www.taiwansemi.com

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4 / 6 page

TSM089N08LCR

Taiwan Semiconductor

4

Version: A1608

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Capacitance vs. Drain-Source Voltage

BVDSS vs. Junction Temperature

Maximum Safe Operating Area, Junction-to-Case

Source-Drain Diode Forward Current vs. Voltage

Normalized Thermal Transient Impedance, Junction-to-Case

t, Square Wave Pulse Duration (sec)

VDS, Drain to Source Voltage (V)

TJ, Junction Temperature (°C)

VSD, Body Diode Forward Voltage (V)

VDS, Drain to Source Voltage (V)

0

1000

2000

3000

4000

5000

6000

7000

8000

0

20

40

60

80

CISS

COSS

CRSS

0.8

0.9

1

1.1

1.2

-75

-50

-25

0

25

50

75

100

125

150

I

D=1mA

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

25℃

150℃

-55℃

0.01

0.1

1

10

0.0001

0.001

0.01

0.1

SINGLE PULSE

RӨJC=1.5°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

Notes:

Duty = t

1 / t2

T

J = TC + PDM x Z

ӨJC x RӨJC

0.1

1

10

100

1000

0.1

1

10

100

R

DS(ON)

SINGLE PULSE

RӨJC=1.5°C/W

T

C=25°C

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同様の説明 - TSM089N08LCR

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