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TLP591B データシート(Datasheet) 1 Page - Toshiba Semiconductor

部品番号. TLP591B
部品情報  TOSHIBA Photocoupler GaALAs Ired & Photo-Diode Array
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
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TLP591B
2002-09-25
1
TOSHIBA Photocoupler GaAℓAs Ired & Photo
−Diode Array
TLP591B
Telecommunication
Programmable Controllers
MOS Gate Driver
MOS FET Gate Driver
The TOSHIBA TLP591B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected
photo−diode array in a six lead plastic DIP package.
TLP591B is suitable for MOS FET gate driver.
TLP591B has an internal shunt resistor to optimize switching speed.
· UL recognized: UL1577, file no. E67349
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating
(Ta ≥ 25°C)
∆IF /°C
-0.5
mA /°C
Pulse forward current
(100µs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
3
V
Junction temperature
Tj
125
°C
Forward current
IFD
50
µA
Reverse voltage
VRD
10
V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 sec.)
Tsol
260
°C
Isolation voltage
(AC, 1 min., R.H.≤ 60%)
(Note 1)
BVS
2500
Vrms
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3
shorted together, and pins 4 and 6 shorted together.
Pin Configuration (top view)
1. : Anode
2. : Cathode
3. : NC
4. : Cathode
6. : Anode
1
2
4
6
3
Unit in mm
TOSHIBA
11−7A9




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