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TLP591B データシート(Datasheet) 2 Page - Toshiba Semiconductor

部品番号. TLP591B
部品情報  TOSHIBA Photocoupler GaALAs Ired & Photo-Diode Array
ダウンロード  4 Pages
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
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TLP591B
2002-09-25
2
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Forward current
IF
20
25
mA
Operating temperature
Topr
-25
85
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.2
1.4
1.7
V
Reverse current
IR
VR = 3 V
10
µA
Capacitance
CT
V = 0, f = 1 MHz
30
60
pF
Forward voltage
VFD
IFD = 10 µA
7
V
Reverse current
IRD
VRD = 10 V
7
µA
Capacitance
(anode to cachode)
CTD
V = 0, f = 1 MHz
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Open voltage
VOC
IF = 20 mA
7
8
V
Short Current
ISC
IF = 20 mA
24
40
µA
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Capacitance (input to output)
CS
VS = 0, f = 1 MHz
0.8
pF
Isolation resistance
RS
VS = 500 V
5×10
10
10
14
AC, 1 minute
2500
AC, 1 second, in oil
5000
Vrms
Isolation voltage
BVS
DC, 1 minute, in oil
5000
Vdc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Turn
-on time
ton
0.2
ms
Turn
-off time
toff
IF = 20 mA, CL = 1000pF
(Fig. 1)
3
ms
Fig. 1 Switching time test circuit
IF
tOFF
tON
vOUT
1V
5V
0V
vOUT
CL
IF




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