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FQA62N25C データシート(PDF) 4 Page - Fairchild Semiconductor |
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FQA62N25C データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page ©2004 Fairchild Semiconductor Corporation Rev.A, March 2004 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 N o te s : ※ 1 . Z θ JC (t ) = 0 . 4 2 /W M a x . ℃ 2 . D u ty F a c to r , D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t ) s ingle puls e D= 0 .5 0.02 0.2 0.05 0.1 0.01 t 1 , S q uar e W a v e P u l s e D u r a t i on [ s ec ] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 T C, Case Temperature [ ] ℃ 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 µs 10 ms 100 µs DC 1 ms Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 31 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µ A T J, Junction Temperature [ oC] Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature |
同様の部品番号 - FQA62N25C |
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同様の説明 - FQA62N25C |
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