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2SD0874A データシート(Datasheet) 1 Page - Panasonic Semiconductor

部品番号. 2SD0874A
部品情報  Silicon NPN epitaxial planar type
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
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Transistors
1
Publication date: November 2002
SJC00197CED
2SD0874, 2SD0874A (2SD874, 2SD874A)
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A)
■ Features
• Large collector power dissipation P
C
• Low collector-emitter saturation voltage V
CE(sat)
• Mini power type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
4.5±0.1
3.0±0.15
45˚
1.6±0.2
1.5±0.1
0.5±0.08
0.4±0.04
0.4±0.08
12
3
1.5±0.1
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Marking Symbol:
• 2SD0874: Z
• 2SD0874A: Y
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0874
VCBO
30
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage 2SD0874
VCEO
25
V
(Base open)
2SD0874A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation *
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0874
VCBO
IC = 10 µA, IE = 030
V
(Emitter open)
2SD0874A
60
Collector-emitter voltage
2SD0874
VCEO
IC = 2 mA, IB = 025
V
(Base open)
2SD0874A
50
Emitter-base voltage (Collector open)
VEBO
IE
= 10 µA, I
C
= 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
µA
Forward current transfer ratio *
1
hFE1 *
2
VCE = 10 V, IC = 500 mA
85
340
hFE2
VCE
= 5 V, I
C
= 1 A
50
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 500 mA, IB = 50 mA
0.2
0.4
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 500 mA, IB = 50 mA
0.85
1.2
V
Transition frequency
fT
VCB
= 10 V, I
E
= −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
20
pF
(Common base, input open circuited)
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
Note) The part numbers in the parenthesis show conventional part number.




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