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CY7C1461KV33 データシート(PDF) 15 Page - Cypress Semiconductor

部品番号 CY7C1461KV33
部品情報  36-Mbit (1M36/2M18) Flow-Through SRAM with NoBL??Architecture
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1461KV33 データシート(HTML) 15 Page - Cypress Semiconductor

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CY7C1461KV33
CY7C1463KV33
Document Number: 001-66681 Rev. *G
Page 15 of 23
Switching Characteristics
Over the Operating Range
Parameter [13, 14]
Description
133 MHz
Unit
Min
Max
tPOWER[15]
1
ms
Clock
tCYC
Clock Cycle Time
7.5
ns
tCH
Clock HIGH
2.5
ns
tCL
Clock LOW
2.5
ns
Output Times
tCDV
Data Output Valid After CLK Rise
6.5
ns
tDOH
Data Output Hold After CLK Rise
2.5
ns
tCLZ
Clock to Low Z [16, 17, 18]
2.5
ns
tCHZ
Clock to High Z [16, 17, 18]
3.8
ns
tOEV
OE LOW to Output Valid
3.0
ns
tOELZ
OE LOW to Output Low Z [16, 17, 18]
0
ns
tOEHZ
OE HIGH to Output High Z [16, 17, 18]
3.0
ns
Setup Times
tAS
Address Setup Before CLK Rise
1.5
ns
tALS
ADV/LD Setup Before CLK Rise
1.5
ns
tWES
WE, BWX Setup Before CLK Rise
1.5
ns
tCENS
CEN Setup Before CLK Rise
1.5
ns
tDS
Data Input Setup Before CLK Rise
1.5
ns
tCES
Chip Enable Setup Before CLK Rise
1.5
ns
Hold Times
tAH
Address Hold After CLK Rise
0.5
ns
tALH
ADV/LD Hold After CLK Rise
0.5
ns
tWEH
WE, BWX Hold After CLK Rise
0.5
ns
tCENH
CEN Hold After CLK Rise
0.5
ns
tDH
Data Input Hold After CLK Rise
0.5
ns
tCEH
Chip Enable Hold After CLK Rise
0.5
ns
Notes
13. Timing reference level is 1.5 V when VDDQ = 3.3 V and is 1.25 V when VDDQ = 2.5 V.
14. Test conditions shown in (a) of Figure 3 on page 14 unless otherwise noted.
15. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation
can be initiated.
16. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of Figure 3 on page 14. Transition is measured ± 200 mV from steady-state voltage.
17. At any voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus.
These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
High Z prior to Low Z under the same system conditions.
18. This parameter is sampled and not 100% tested.


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