KTX511T datasheet(2/5 Pages) KEC

部品番号	KTX511T

部品情報	EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE

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メーカー	KEC [KEC(Korea Electronics)]

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2 / 5 page

2002. 1. 24

2/5

KTX511T

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-12V, IE=0

-

-0.1

A

Emitter Cut-off Current

IEBO

VEB=-4V, IC=0

-

-0.1

A

Collector-Base Breakdown Voltage

V(BR)CBO

IC=-10 A, IE=0

20

-

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-1mA, IB=0

20

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=-10 A, IC=0

-5

-

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-750mA, IB=-15mA

-

-120

-180

mV

IC=-1.5A, IB=-30mA

-

-210

-320

mV

Base-Emitter Saturation Voltage

VBE(sat)

IC=-750mA, IB=-15mA

-

-0.85

-1.2

V

DC Current Gain

hFE

VCE=-2V, IC=-100mA

200

-

560

Transition Frequency

fT

VCE=-2V, IC=-300mA

-

210

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, f=1MHz

-

30

-

pF

Swiitching

Time

Turn-On Time

ton

-

50

-

nS

Storage Time

tstg

-

90

-

Fall Time

tf

-

15

-

Transistor Q1

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Voltage

VR

IR=1mA

30

-

V

Forward Voltage

VF

IF=0.7A

-

0.55

V

Reverse Current

IR

VR=30V

80

A

Total Capacitance

CT

VR=0V, f=1MHz

-

190

-

pF

Reverse Recover Time

trr

IF=IR=100mA

-

7.5

-

ns

Diode (SBD) D1

IB1

B2

I

INPUT

OUTPUT

50

Ω

220

µF

PW=20

µs

DC 1%

470

µF

R

V

B

R

L

R

BE

V

=5V

CC

V

=-5V

-20I =20I =I =-750mA

B1

B2 C

<

=

同様の部品番号 - KTX511T

メーカー	部品番号	データシート	部品情報
KEC(Korea Electronics)	KTX512T	108Kb / 5P	EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE

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同様の説明 - KTX511T

メーカー	部品番号	データシート	部品情報
KEC(Korea Electronics)	KTX512T	108Kb / 5P	EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
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