データシートサーチシステム |
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ACT88320QI-T データシート(PDF) 10 Page - Active-Semi, Inc |
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ACT88320QI-T データシート(HTML) 10 Page - Active-Semi, Inc |
10 / 50 page ACT88320QI-T Rev 2.0, 20-Dec-2017 Innovative PowerTM www.active-semi.com ActiveSwitcherTM is a trademark of Active-Semi. Copyright © 2017 Active-Semi, Inc 10 OVP, INRUSH NMOS SWITCH, ELECTRICAL CHARACTERISITICS (VIN = 3.3V, TA = 25°C, unless otherwise specified.) PARAMETER CONDITIONS MIN TYP MAX UNIT Operating Input Voltage Range (VIN) 2.7 5.5 V VIN Input Current IC Disabled 1 µA OVGATE Pull-up Current OVGATE = 0V 10 µA OVGATE Discharge Resistance 10 Ω Overcurrent Shutdown Threshold Voltage across current sense resistor 70 85 100 mV Overcurrent Warning Threshold Percent of shutdown voltage 72.5 80 87.5 % Soft-Start Slew Rate Start up from 0V to 5.0V on OVGATE. CGate = 1nF 500 µs Over Current Deglitch Time Steady state operation 40 µs Over Current Blanking Time Blanking time during power up 85 µs Retry time after Over Current 42 ms OVSNS POK Threshold (falling) 2.5 V OVSNS POK Threshold (rising) 2.7 V OVSNS POK Threshold Hysteresis 100 200 mV OVSNS OV Threshold (rising) 6 V OVSNS OV Threshold hysteresis 200 400 mV Startup Delay After OVSNS POK to OVGATE rising, CGate = 1nF 40 µs Standby Current into OVSNS and OVSNS_M After OVSNS POK, steady state mode 40 50 µA VOVGATE Voltage (VOVGATE – VIN) OVSNS = 3.3V 5.4 V OVSNS = 5V 8 |
同様の部品番号 - ACT88320QI-T |
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同様の説明 - ACT88320QI-T |
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