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BC33725 データシート(PDF) 2 Page - Fairchild Semiconductor |
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BC33725 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Em itter Breakdown Voltage IC = 10 m A, IB = 0 45 V V(BR)CES Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 50 V V(BR)EBO Em itter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 20 V, IE = 0, TA = +25 °C VCB = 20 V, IE = 0, TA = +150 °C 100 5.0 nA µA IEBO Em itter Cutoff Current VEB = 5.0 V, IC = 0 10 µA ON CHARACTERISTICS hFE DC Current Gain VCE = 1.0 V, IC = 100 mA 337-16 337-25 VCE = 1.0 V, IC = 500 mA 100 160 40 250 400 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V VBE(on) Base-Emitter On Voltage VCE = 1.0 V, IC = 500 mA 1.2 V |
同様の部品番号 - BC33725 |
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同様の説明 - BC33725 |
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