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BTS50025-1TAD データシート(PDF) 25 Page - Infineon Technologies AG |
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BTS50025-1TAD データシート(HTML) 25 Page - Infineon Technologies AG |
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25 / 51 page  Data Sheet 25 Rev. 1.1 2017-03-30 BTS50025-1TAD Smart High-Side Power Switch Functional Description 5.3.4 Overvoltage Protection In case VS(SC)_max < VS < VDS(CL), the device will switch ON/OFF normally as in the nominal voltage range. Parameters may deviate from the specified limits and lifetime is reduced. This specially impacts the short circuit robustness, as well as the maximum energy EAS and EAR the device can handle. The BTS50025-1TAD provides Infineon® SMART CLAMPING functionality, which suppresses excessive transient overvoltage by actively clamping the overvoltage across the power stage and the load. This is achieved by controlling the clamp voltage VDS(CL) depending on the junction temperature TJ and the load current IL (see Figure 21 for details). Figure 21 Overvoltage Protection with External Components 5.3.5 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. To limit the risk of overtemperature, the device provides Infineon® ReverSave™ functionality. The power in this intrinsic body diode is limited by turning the DMOS ON. The DMOS resistance is then equal to RDS(REV). Additionally, the current into the logic has to be limited. The device includes a RVS resistor which limits the current in the diodes. To avoid overcurrent in the RVS resistor, it is nevertheless recommended to use a RIN resistor. Please refer to maximum current described in Chapter 4.1. Figure 22 shows a typical application. RIS is used to limit the current in the sense transistor, which behaves as a diode. The recommended typical value for RIN is 4.7 kΩ and for RIS 1kΩ. RVS RIN RIS VBAT VIN VS OUT IN IS GND |
同様の部品番号 - BTS50025-1TAD |
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同様の説明 - BTS50025-1TAD |
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