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FDC655BN データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDC655BN データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com April 2005 FDC655BN Rev. C(W) FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET Features ■ 6.3 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson General Description This N-Channel Logic Level MOSFET is produced using Fair- child Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery pow- ered applications where low in-line power loss and fast switch- ing are required. Absolute Maximum Ratings TA = 25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 6.3 A – Pulsed 20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range – 55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Device Marking Device Reel Size Tape width Quantity .55B FDC655BN 7’’ 8mm 3000 units 1 2 3 6 5 4 D D SuperSOT-6 TM D G D 55B S |
同様の部品番号 - FDC655BN |
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同様の説明 - FDC655BN |
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