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FDD6676AS データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDD6676AS データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDD6676AS Rev A(X) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 16A 108 250 mJ IAR Drain-Source Avalanche Current 16 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C 31 mV/ °C VDS = 24 V, VGS = 0 V 500 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V, TJ=125°C 11 mA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C –3.6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16 A,TJ=125°C 4.7 5.8 6.7 5.7 7.1 8.4 m Ω gFS Forward Transconductance VDS = 5 V, ID = 16 A 61 S Dynamic Characteristics Ciss Input Capacitance 2500 pF Coss Output Capacitance 710 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 270 pF RG Gate Resistance V GS = 0 V, f = 1.0 MHz 1.6 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 12 21 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 46 74 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 28 44 ns td(on) Turn–On Delay Time 20 32 ns tr Turn–On Rise Time 24 38 ns td(off) Turn–Off Delay Time 35 56 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 27 43 ns Qg(TOT) Total Gate Charge, Vgs = 10V 46 64 nC Qg Total Gate Charge, Vgs = 5V 25 35 nC Qgs Gate–Source Charge 7 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 16 A 9 nC |
同様の部品番号 - FDD6676AS |
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同様の説明 - FDD6676AS |
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