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IKW40T120 データシート(PDF) 1 Page - Infineon Technologies AG

部品番号 IKW40T120
部品情報  LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARAALEL EMCON HE DIODE
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メーカー  INFINEON [Infineon Technologies AG]
ホームページ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW40T120 データシート(HTML) 1 Page - Infineon Technologies AG

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IKW40T120
^
TrenchStop Series
Power Semiconductors
1
Preliminary / Rev. 1 Jul-02
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Best in class TO247
Short circuit withstand time – 10
µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Package
Ordering Code
IKW40T120
1200V
40A
1.8V
150
°C
TO-247AC
Q67040-S4520
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
TC = 25°C
TC = 100°C
I C
75
40
Pulsed collector current, tp limited by Tjmax
I Cp ul s
105
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
-
105
Diode forward current
TC = 25°C
TC = 100°C
I F
80
40
Diode pulsed current, tp limited by Tjmax
I Fp ul s
105
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
1)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
t SC
10
µs
Power dissipation
TC = 25°C
Ptot
270
W
Operating junction temperature
T j
-40...+150
Storage temperature
T st g
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-247-3-1
(TO-247AC)
G
C
E


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