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ST1200C14K3 データシート(PDF) 3 Page - International Rectifier |
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ST1200C14K3 データシート(HTML) 3 Page - International Rectifier |
3 / 7 page ST1200C..K Series 3 Bulletin I25196 rev.B 01/00 www.irf.com di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, t r ≤ 1µs of turned-on current T J = TJ max, anode voltage ≤ 80% V DRM Gate current 1A, di g /dt = 1A/µs V d = 0.67% V DRM, TJ = 25°C I TM = 550A, T J = T J max, di/dt = 40A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, t p = 500µs Parameter ST1200C..K Units Conditions Switching 1000 A/µs t d Typical delay time 1.9 t q Typical turn-off time 200 µs dv/dt Maximum critical rate of rise of off-state voltage I RRM Max. peak reverse and off-state I DRM leakage current Blocking 500 V/µs T J = TJ max. linear to 80% rated V DRM Parameter ST1200C..K Units Conditions 100 mA T J = TJ max, rated VDRM /V RRM applied P GM Maximum peak gate power 16 T J = T J max, t p ≤ 5ms P G(AV) Maximum average gate power 3 T J = TJ max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 3.0 A T J = T J max, t p ≤ 5ms +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage T J = - 40°C mA T J = 25°C T J = 125°C T J = - 40°C VT J = 25°C T J = 125°C I GD DC gate current not to trigger 10 mA Parameter ST1200C..K Units Conditions 20 5.0 Triggering TYP. MAX. 200 - 100 200 50 - 1.4 - 1.1 3.0 0.9 - V GD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied T J = TJ max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied V GT DC gate voltage required to trigger I GT DC gate current required to trigger W VT J = TJ max, t p ≤ 5ms |
同様の部品番号 - ST1200C14K3 |
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同様の説明 - ST1200C14K3 |
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