データシートサーチシステム |
|
ME15N10-G データシート(PDF) 2 Page - List of Unclassifed Manufacturers |
|
ME15N10-G データシート(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 4 page N-Channel 100-V (D-S) MOSFET ME15N10/ME15N10-G 02 Dec,2009-Ver1.0 Symbol Parameter Limit Min Typ Max Unit STATIC BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 3 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V 1 μ A RDS(ON) Drain-Source On-Resistance a VGS=10V, ID= 8A 80 100 mΩ VSD Diode Forward Voltage IS=8A, VGS=0V 0.9 1.2 V DYNAMIC Qg Total Gate Charge VDS=80V, VGS=10V, ID=10A 24 Qg Total Gate Charge 13 Qgs Gate-Source Charge 4.6 Qgd Gate-Drain Charge VDS=80V, VGS=4.5V, ID=10A 7.6 nC Ciss Input Capacitance 890 Coss Output Capacitance 58 Crss Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHz 23 pF Rg Gate-Resistance VDS=0V, VGS=0V, f=1MHz 0.9 Ω td(on) Turn-On Delay Time 14 tr Turn-On Rise Time 33 td(off) Turn-Off Delay Time 39 tf Turn-Off Fall Time VDS=50V, RL =5Ω, VGEN=10V, RG=1Ω 5 ns Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Electrical Characteristics (TA =25℃ Unless Otherwise Specified) |
同様の部品番号 - ME15N10-G |
|
同様の説明 - ME15N10-G |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |