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FQD6N50C データシート(PDF) 4 Page - Fairchild Semiconductor |
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FQD6N50C データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page Rev. B, June 2004 ©2004 Fairchild Semiconductor Corporation Typical Characteristics (Continued) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Transient Thermal Response Curve t1 PDM t2 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µA T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 2.25 A T J, Junction Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 N o te s : ※ 1 . Z θ JC (t) = 2 . 0 5 /W M a x . ℃ 2 . D uty Fa c to r, D = t 1/t 2 3 . T JM - T C = P DM * Z θ JC (t) sin g le p u lse D= 0 .5 0.02 0.2 0.0 5 0.1 0.01 t 1, S quare W a v e P u l s e D u ra tion [s ec ] 25 50 75 100 125 150 0 1 2 3 4 5 T C, Case Temperature [ ] ℃ 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms DC 10 ms 100 µs Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] |
同様の部品番号 - FQD6N50C |
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同様の説明 - FQD6N50C |
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