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IKW15T120 データシート(PDF) 1 Page - Infineon Technologies AG |
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IKW15T120 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 15 page IKW15T120 ^ TrenchStop Series Power Semiconductors 1 Preliminary / Rev. 1 Jul-02 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D • Short circuit withstand time – 10 µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Very soft, fast recovery anti-parallel EmCon HE diode • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Package Ordering Code IKW15T120 1200V 15A 1.7V 150 °C TO-247AC Q67040-S4516 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C I C 30 15 Pulsed collector current, tp limited by Tjmax I Cp ul s 45 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 45 Diode forward current TC = 25°C TC = 100°C I F 30 15 Diode pulsed current, tp limited by Tjmax I Fp ul s 45 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 1) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C t SC 10 µs Power dissipation TC = 25°C Ptot 110 W Operating junction temperature T j -40...+150 Storage temperature T st g -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-247-3-1 (TO-247AC) G C E |
同様の部品番号 - IKW15T120 |
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同様の説明 - IKW15T120 |
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