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DAM15N100B データシート(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM15N100B データシート(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
1 / 4 page N-Channel Enhancement Mode MOSFET Features VDSS = 100V RDS(ON) Typ.65mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 100 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID 15 A @ Tc = 100°C 9.5 Drain Current Pulsed@ TC = 25°C IDM 60 A Single Pulse Avalanche Energy EAS 18 mJ Single Pulse Avalanche Current IAS 19 A Maximum Power Dissipation PD 40 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJc 3.1 °C/W Aug.2017 DAM15N100B Note3 |
同様の部品番号 - DAM15N100B |
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同様の説明 - DAM15N100B |
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