WS7808QD

Will Semiconductor Ltd.

5

Oct. 2017_V1.0

IMD2 Test Conditions

Nominal test condition unless otherwise stated. All unused ports are 50Ω terminated.

VDD=2.8V, Temp=+25°C, PIN=0dBm.

Band

Transmit

Frequency

(MHz)

Transmit

Power

(dBm)

Frequency

Blocker,

Low

(MHz)

Frequency

Blocker,

High

(MHz)

Power

Blocker

(dBm)

Receive

Frequency

(MHz)

1

1950.0

+20

190

4090

-15

2140.0

2

1880.0

80

3840

1960.0

4

1732.0

400

3864

2132.0

5

836.5

45

1718

881.5

7

2535.0

120

5187

2655.0

8

897.0

45

1839

942.0

IMD3 Test Conditions

Nominal test condition unless otherwise stated. All unused ports are 50Ω terminated.

VDD=2.8V, Temp=+25°C, PIN=0dBm.

Band

Transmit

Frequency

(MHz)

Transmit

Power

(dBm)

Frequency

Blocker,

(MHz)

Power

Blocker

(dBm)

Receive

Frequency

(MHz)

1

1950.0

+20

1760.0

-15

2140.0

2

1880.0

1800.0

1960.0

4

1732.0

1332.0

2132.0

5

836.5

791.5

881.5

7

2535.0

2415.0

2655.0

8

897.0

852.0

942.0

Triple Beat Ratio Test Conditions

Band

Transmit

Frequency

1

(MHz)

Transmit

Power 1

(dBm)

Transmit

Frequency

2

(MHz)

Transmit

Power 2

(dBm)

Frequency

Blocker @

ANT

(MHz)

Power

Blocker

(dBm)

TBR

Product

Frequency

(MHz)

2

1880.0

+21.5

1881.0

+21.5

1960.0

-30

1960.0±1

5

836.5

881.5

881.5

881.5±1