EMD04N06A datasheet(1/6 Pages) EXCELLIANCE

部品番号	EMD04N06A

部品情報	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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メーカー	EXCELLIANCE [Excelliance MOS Corp.]

ホームページ	http://www.excelliancemos.com/

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2014/8/14

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EMD04N06A

G

D

S

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BVDSS

60V

RDSON (MAX.)

4.8mΩ

ID

80A

UIS, Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNIT

Gate‐Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 °C

ID

80

A

TC = 100 °C

50

Pulsed Drain Current

1,3

IDM

170

Avalanche Current

IAS

80

Avalanche Energy

L = 0.1mH, ID=80A, RG=25Ω

EAS

320

mJ

Repetitive Avalanche Energy

2

L = 0.05mH

EAR

160

Power Dissipation

TC = 25 °C

PD

69

W

TC = 100 °C

27

Operating Junction & Storage Temperature Range

Tj, Tstg ‐55 to 150

°C

100% UIS testing in condition of VD=30V, L=0.1mH, VG=10V, IL=50A, Rated VDS=60V N-CH

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

RJC

1.8

°C / W

Junction‐to‐Ambient

RJA

75

1Pulse width limited by maximum junction temperature.

2Duty cycle  1％

3Pulsed drain current rating is package limited.

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