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STW30N65M5 データシート(Datasheet) 1 Page - Inchange Semiconductor Company Limited |
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isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor STW30N65M5 FEATURES · Static Drain-Source On-Resistance : RDS(on) = 0.139Ω(Max) · Fast Switching · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ± 25 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 140 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.89 ℃ /W |
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