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H02N60J データシート(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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H02N60J データシート(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
1 / 6 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 H02N60I, H02N60J, H02N60E, H02N60F HSMC Product Specification H02N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. Features • Robust High Voltage Termination • Avalanc he Energy Specified • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • I DSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol Parameter Value Units I D Drain to Current (Continuous) 2 A I DM Drain to Current (Pulsed) 8 A V GS Gate-to-Source Voltage (Continue) ±20 V Total Power Dissipation (T C=25 oC) H02N60I (TO-251) / H02N60J (TO-252) H02N60E (TO-220AB) H02N60F (TO-220FP) 50 50 25 W P D Derate above 25 °C H02N60I (TO-251) / H02N60J (TO-252) H02N60E (TO-220AB) H02N60F (TO-220FP) 0.4 0.4 0.33 W/ °C T j, Tstg Operating and Storage Temperature Range -55 to 150 °C E AS Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 °C (V DD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) 35 mJ T L Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 260 °C H02N60 Series Pin Assignment 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 1 2 3 Tab 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 1 2 3 Tab 1 2 3 Tab H02N60 Series Symbol: G D S |
同様の部品番号 - H02N60J |
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同様の説明 - H02N60J |
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