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KBPC2504W データシート(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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KBPC2504W データシート(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
1 / 3 page VRRM = 50 V - 400 V IO = 25 A Features KBPC-T/W Package Mechanical Data Parameter Symbol KBPC25005T/W KBPC2501T/W Unit Repetitive peak reverse voltage VRRM 50 100 V RMS reverse voltage VRMS 35 70 V DC blocking voltage VDC 50 100 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol KBPC25005T/W KBPC2501T/W Unit Maximum average forward rectified current IO 25 25 A Peak forward surge current IFSM 350 350 A Maximum instantaneous forward voltage per leg 1.1 1.1 5 5 500 500 Typical junction capacitance 1 Cj 300 300 pF Thermal characteristics Typical thermal resistance 2 RΘJC 1.9 1.9 °C/W 1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C. 2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink V Electrical characteristics at Tc = 25 °C, unless otherwise specified 500 -55 to 150 -55 to 150 -55 to 150 VF 1.1 1.1 KBPC2502T/W 5 Single Phase Silicon Bridge Rectifier • High efficiency • Metal case Case: Mounted in the bridge encapsulation Conditions • Not ESD Sensitive • Silicon junction Mounting: Hole for #10 screw • Types from 50 V to 400 V V RRM KBPC25005T/W thru KBPC2504T/W Tc = 25 °C IF = 12.5 A Conditions KBPC2504T/W 200 140 KBPC2502T/W -55 to 150 Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Polarity: Marked on case Maximum DC reverse current at rated DC blocking voltage per leg IR Tc = 100 °C μA 5 400 280 400 200 Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Tc = 55 °C 25 25 8.3 ms half sine-wave 350 350 KBPC2504T/W 300 300 1.9 1.9 500 1 Oct. 2018 http://www.diodemodule.com/silicon_products/bridge_rectifiers/kbpc25005tw.pdf |
同様の部品番号 - KBPC2504W |
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同様の説明 - KBPC2504W |
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