BCW70LT1 datasheet(5/8 Pages) ONSEMI

部品番号	BCW70LT1

部品情報	General Purpose Transistors(PNP Silicon)

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BCW70LT1

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5

TYPICAL DYNAMIC CHARACTERISTICS

Figure 10. Turn–On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 11. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

2.0

5.0

10

20

30

50

1000

Figure 12. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 13. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

3.0

1.0

500

0.5

10

5.0

7.0

10

20

30

50

70

100

300

7.0

70

100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 V

tr

10

20

30

50

70

100

200

300

500

700

– 2.0

–1.0

VCC = – 3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

50

70

100

200

300

0.7 1.0

2.0

3.0

5.0 7.0

10

20

30

50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

0.05

Cib

Cob

200

– 3.0

– 5.0 – 7.0

–20

–10

–30

–50 – 70 –100

TJ = 25°C

Figure 14. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0 k 2.0 k

5.0 k 10 k

20 k

50 k 100

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN–569)

ZθJA(t) = r(t) • RθJA

TJ(pk) – TA = P(pk) ZθJA(t)

t1

t2

P(pk)

FIGURE 16

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