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PHE13003A データシート(PDF) 6 Page - WeEn Semiconductors |
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PHE13003A データシート(HTML) 6 Page - WeEn Semiconductors |
6 / 10 page WeEn Semiconductors PHE13003A NPN power transistor PHE13003A All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 3 October 2016 6 / 10 003aad546 10- 3 10 1 10- 2 10- 1 10 102 1 IC (A) hFE VCE = 3 V (1) (2) (3) Tj = 25 °C Tj = 125 °C Tj = - 35 °C Fig. 8. DC current gain as a function of collector current; typical values 003aad547 10- 3 10 1 10- 2 10- 1 10 102 1 IC (A) hFE VCE = 5 V (1) (2) (3) Tj = 25 °C Tj = 125 °C Tj = - 35 °C Fig. 9. DC current gain as a function of collector current; typical values 001aab991 VCC LC DUT LB IBon VBB Fig. 10. Test circuit for inductive load switching 001aab992 IC IB 90 % toff IBon ts tf t t - IBoff ICon 10 % Fig. 11. Switching times waveforms for inductive load |
同様の部品番号 - PHE13003A |
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同様の説明 - PHE13003A |
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