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STD9N10T4 データシート(PDF) 2 Page - STMicroelectronics |
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STD9N10T4 データシート(HTML) 2 Page - STMicroelectronics |
2 / 12 page STD9N10/STD9N10-1 2/12 Table 3. Absolute Maximum Ratings Note: 1. Pulse width limited by safe operating area. Table 4. Thermal Data Table 5. Avalanche Characteristics Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain- gate Voltage (RGS = 20 kΩ) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont.) at TC = 25 °C 9 A ID Drain Current (cont.) at TC = 100 °C 6 A IDM (1) Drain Current (pulsed) 36 A Ptot Total Dissipation at TC = 25 °C 45 W Derating Factor 0.3 W°/C Tstg Storage Temperature -65 to 175 °C Tj Max. Operating Junction Temperature 175 °C Symbol Parameter Value Unit Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 9A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C; ID = IAR; VDD = 25 V) 30 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 7mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by Tj max, δ < 1%) 6A |
同様の部品番号 - STD9N10T4 |
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同様の説明 - STD9N10T4 |
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