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2SK1611 データシート(PDF) 1 Page - Panasonic Semiconductor |
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2SK1611 データシート(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power F-MOS FETs unit: mm 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q V GSS: 30V guaranteed q Low R DS(on), high-speed switching characteristic s Applications q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification s Absolute Maximum Ratings (T C = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25°C Ta = 25°C Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±3 ±6 20 50 2 150 −55 to +150 Unit V V A A mJ W °C °C s Electrical Characteristics (T C = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Fall time Turn-off time (delay time) Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Ciss Coss Crss ton tf td(off) Conditions VDS = 640V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.5mH, ID = 3A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A VDS = 20V, VGS = 0, f = 1MHz VGS = 10V, ID = 2A VDD = 200V, RL = 100Ω min 800 20 1 1.5 typ 3.2 2.4 730 90 40 40 35 105 max 0.1 ±1 5 4 Unit mA µA V mJ V Ω S pF pF pF ns ns ns * Single pulse * Avalanche energy capacity test circuit 1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a) 10.0±0.2 5.5±0.2 0.5 +0.2 –0.1 1.4±0.1 1.3±0.2 0.8±0.1 2.54±0.25 5.08±0.5 2 13 2.7±0.2 4.2±0.2 φ3.1±0.1 VDS ID L Drain Gate Source RGS C VDD PVS |
同様の部品番号 - 2SK1611 |
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同様の説明 - 2SK1611 |
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