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FDC6432SH データシート(PDF) 7 Page - Fairchild Semiconductor |
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FDC6432SH データシート(HTML) 7 Page - Fairchild Semiconductor |
7 / 8 page FDC6432SH Rev B (W) Typical Characteristics : Q2 0 1 2 3 4 5 012345 67 Qg, GATE CHARGE (nC) ID = -2.5A VDS = -4V -6V -8V 0 100 200 300 400 500 600 700 800 03 6 9 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 18. Gate Charge Characteristics. Figure 19. Capacitance Characteristics. 0.01 0.1 1 10 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs RDS(ON) LIMIT VGS = -4.5V SINGLE PULSE RθJA = 175 oC/W TA = 25 oC 10ms 1ms 10s 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 175°C/W TA = 25°C Figure 20. Maximum Safe Operating Area. Figure 21. Single Pulse Maximum Power Dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 175 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
同様の部品番号 - FDC6432SH |
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同様の説明 - FDC6432SH |
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