データシートサーチシステム |
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FQD6N60CTM データシート(PDF) 4 Page - Fairchild Semiconductor |
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FQD6N60CTM データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FQD6N60C Rev. A Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µ A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 2.0 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 µs DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 1.5 3.0 4.5 T C, Case Temperature [ ] ℃ 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 No te s : ※ 1 . Z θ JC( t) = 1. 56 /W M a x . ℃ 2 . D u ty F a c to r , D = t 1 /t2 3 . T JM - T C = P DM * Z θ JC(t) s ing le pu ls e D= 0 .5 0.02 0.2 0.0 5 0.1 0.01 t 1 , S quar e W a v e P u ls e D u r a t io n [ s e c ] |
同様の部品番号 - FQD6N60CTM |
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同様の説明 - FQD6N60CTM |
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