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FQP3N80C データシート(PDF) 2 Page - Fairchild Semiconductor |
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FQP3N80C データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Rev. A, April 2003 ©2003 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 67mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.5 A -- 4.0 4.8 Ω gFS Forward Transconductance VDS = 50 V, ID = 1.5 A (Note 4) -- 3 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 543 705 pF Coss Output Capacitance -- 54 70 pF Crss Reverse Transfer Capacitance -- 5.5 7.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 3 A, RG = 25 Ω (Note 4, 5) -- 15 40 ns tr Turn-On Rise Time -- 43.5 95 ns td(off) Turn-Off Delay Time -- 22.5 55 ns tf Turn-Off Fall Time -- 32 75 ns Qg Total Gate Charge VDS = 640 V, ID = 3 A, VGS = 10 V (Note 4, 5) -- 13 16.5 nC Qgs Gate-Source Charge -- 3.4 -- nC Qgd Gate-Drain Charge -- 5.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.0 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 3.0 A, dIF / dt = 100 A/µs (Note 4) -- 642 -- ns Qrr Reverse Recovery Charge -- 4.0 -- µC |
同様の部品番号 - FQP3N80C |
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同様の説明 - FQP3N80C |
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