HUFA76404DK8T datasheet(2/12 Pages) FAIRCHILD

部品番号	HUFA76404DK8T

部品情報	N-Channel Dual MOSFET

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メーカー	FAIRCHILD [Fairchild Semiconductor]

ホームページ	http://www.fairchildsemi.com

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HUFA76404DK8T Rev. B

www.fairchildsemi.com

2

MOSFET Maximum Ratings T

A = 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Electrical Characteristics T

A = 25°C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

62

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current

3.6

A

Continuous (TA = 25

oC, V

GS = 10V, R

θJA = 50

oC/W)

Continuous (TA = 25

oC, V

GS = 5V, R

θJA = 50

oC/W)

3.2

A

Pulsed

Figure 4

A

EAS

Single Pulse Avalanche Energy (Note 1)

128

mJ

PD

Power dissipation

2.5

W

Derate above 25oC20

mW/oC

TJ, TSTG

Operating and Storage Temperature

-55 to 150

oC

RθJA

Pad Area = 0.50 in2 (323 mm2) (Note 2)

50

oC/W

RθJA

Pad Area = 0.027 in2 (17.4 mm2) (Note 3)

170

oC/W

RθJA

Pad Area = 0.006 in2 (3.87 mm2) (Note 4)

183

oC/W

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

76404DK8

HUFA76404DK8T

SO-8

330mm

12mm

2500 units

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250µA, VGS = 0V

62

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 55V, VGS = 0V

--

1

µA

VDS = 50V, VGS = 0V,

TA = 150

oC

--

250

IGSS

Gate to Source Leakage Current

VGS = ±20V

-

±100

nA

VGS(TH)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA1

-

3

V

rDS(ON)

Drain to Source On Resistance

ID = 3.6A, VGS = 10V

-

0.088

0.110

Ω

ID = 3.2A, VGS = 5V

-

0.110

0.132

CISS

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1MHz

-

250

-

pF

COSS

Output Capacitance

-

80

-

pF

CRSS

Reverse Transfer Capacitance

-

7

-

pF

RG

Gate Resistance

VGS = 0.5V, f = 1MHz

-

100

-

Ω

Qg(tot)

Total Gate Charge at 5V

VGS = 0V to 5V

VDD = 30V

ID = 3.6A

Ig = 1.0mA

-3.8

4.9

nC

Qg(TH)

Threshold Gate Charge

VGS = 0V to 1V

-

0.3

0.4

nC

Qgs

Gate to Source Gate Charge

-

0.8

-

nC

Qgs2

Gate Charge Threshold to Plateau

-

0.5

-

nC

Qgd

Gate to Drain “Miller” Charge

-

1.7

-

nC

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