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FM2100-MH データシート(PDF) 1 Page - Formosa MS

部品番号 FM2100-MH
部品情報  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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メーカー  FORMOSA [Formosa MS]
ホームページ  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM2100-MH データシート(HTML) 1 Page - Formosa MS

  FM2100-MH Datasheet HTML 1Page - Formosa MS FM2100-MH Datasheet HTML 2Page - Formosa MS  
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FM220-MH THRU FM2100-MH
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECSOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0393 gram
(V)
(V)
(V)
(V)
(
oC)
FM220-MH
22
20
14
20
FM230-MH
23
30
21
30
FM240-MH
24
40
28
40
FM250-MH
25
50
35
50
FM260-MH
26
60
42
60
FM280-MH
28
80
56
80
FM2100-MH
20
100
70
100
SYMBOLS
MARKING
CODE
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
0.70
-55 to +125
-55 to +150
0.85
0.50
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
40
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
10
mA
Thermal resistance
Junction to ambient
RqJA
85
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
160
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
0.031(0.8) Typ.


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