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MGP4N60E データシート(PDF) 2 Page - ON Semiconductor |
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MGP4N60E データシート(HTML) 2 Page - ON Semiconductor |
2 / 5 page MGP4N60E 2 Motorola IGBT Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) V(BR)CES 600 — — 870 — — Vdc mV/ °C Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V(BR)ECS 15 — — Vdc Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) ICES — — — — 10 200 µAdc Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) IGES — — 50 mAdc ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 1.5 Adc) (VGE = 15 Vdc, IC = 1.5 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 3.0 Adc) VCE(on) — — — 1.6 1.5 2.0 1.9 — 2.4 Vdc Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) VGE(th) 4.0 — 6.0 10 8.0 — Vdc mV/ °C Forward Transconductance (VCE = 10 Vdc, IC = 3.0 Adc) gfe — 1.8 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vdc V 0 Vdc Cies — 342 — pF Output Capacitance (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Coes — 40 — Transfer Capacitance f = 1.0 MHz) Cres — 3.0 — SWITCHING CHARACTERISTICS (1) Turn–On Delay Time (V 360 Vd I 3 0 Ad td(on) — 34 — ns Rise Time (VCC = 360 Vdc, IC = 3.0 Adc, V 15 Vd L 300 H tr — 30 — Turn–Off Delay Time VGE = 15 Vdc, L = 300 mH, RG = 20 Ω) td(off) — 36 — Fall Time RG = 20 Ω) Energy losses include “tail” tf — 216 — Turn–Off Switching Loss Eoff — 0.10 0.15 mJ Turn–On Delay Time (V 360 Vd I 3 0 Ad td(on) — 33 — ns Rise Time (VCC = 360 Vdc, IC = 3.0 Adc, V 15 Vd L 300 H tr — 32 — Turn–Off Delay Time VGE = 15 Vdc, L = 300 mH, RG = 20 Ω, TJ = 125°C) td(off) — 56 — Fall Time RG = 20 Ω, TJ = 125 C) Energy losses include “tail” tf — 340 — Turn–Off Switching Loss Eoff — 0.165 — mJ Gate Charge (V 360 Vdc I 3 0 Adc QT — 18.1 — nC (VCC = 360 Vdc, IC = 3.0 Adc, VGE = 15 Vdc) Q1 — 3.8 — VGE = 15 Vdc) Q2 — 7.8 — INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 ″ from package to emitter bond pad) LE — 7.5 — nH (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. |
同様の部品番号 - MGP4N60E |
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同様の説明 - MGP4N60E |
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