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MJ11033 データシート(PDF) 1 Page - ON Semiconductor |
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1 / 4 page 1 Motorola Bipolar Power Transistor Device Data High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applica- tions. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) • Diode Protection to Rated IC • Monolithic Construction with Built–In Base–Emitter Shunt Resistor • Junction Temperature to +200_C MAXIMUM RATINGS Rating Symbol MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 Unit Collector–Emitter Voltage VCEO 60 90 120 Vdc Collector–Base Voltage VCB 60 90 120 Vdc Emitter–Base Voltage VEB 5 Vdc Collector Current — Continuous Peak IC ICM 50 100 Adc Base Current — Continuous IB 2 Adc Total Power Dissipation @ TC = 25_C Derate above 25 _C @ TC = 100_C PD 300 1.71 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to + 200 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Maximum Lead Temperature for Soldering Purposes for v 10 seconds TL 275 _C Thermal Resistance Junction to Case R θJC 0.584 _C Figure 1. Darlington Circuit Schematic BASE EMITTER COLLECTOR ≈ 3.0 k ≈ 25 PNP MJ11029 MJ11031 MJ11033 BASE EMITTER COLLECTOR ≈ 3.0 k ≈ 25 NPN MJ11028 MJ11030 MJ11032 Preferred devices are Motorola recommended choices for future use and best overall value. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D © Motorola, Inc. 1995 MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60 – 120 VOLTS 300 WATTS *Motorola Preferred Device NPN PNP * * CASE 197A–05 TO–204AE (TO–3) |
同様の部品番号 - MJ11033 |
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同様の説明 - MJ11033 |
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