MMDF3N03HD datasheet(3/12 Pages) ONSEMI

部品番号	MMDF3N03HD

部品情報	Power MOSFET 3 Amps, 30 Volts

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MMDF3N03HD

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TYPICAL ELECTRICAL CHARACTERISTICS

0

0.4

0.8

1.2

1.6

2

0

1

3

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.4

0.5

0.6

0.05

Figure 3. On–Resistance versus

Gate–to–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

1

100

Figure 5. On–Resistance Variation

with Temperature

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–to–Source Leakage Current

versus Voltage

VDS ≥ 10 V

TJ = -55°C

25°C

100

°C

0.3

4

2

0.1

TJ = 25°C

2

4

6

5

1

2

2.5

3

3.5

4

0.2

0.08

0

0.5

1

2.5

3

10

0

5

10

15

30

2.7 V

20

25

0

0.06

0.07

3

23

4

5

8

67

910

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

1.5

2

10 V

VGS = 4.5

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

-50

0

50

100

150

0

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 1.5 A

125

75

25

-25

VGS = 0 V

TJ = 125°C

100°C

0.2

0.6

1.8

1.4

1

5

6

2.5 V

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V

4.3 V

3.9 V

4.1 V

VGS = 10 V

ID = 1.5 A

TJ = 25°C

同様の部品番号 - MMDF3N03HD

メーカー	部品番号	データシート	部品情報
Motorola, Inc	MMDF3N03HD	281Kb / 10P	DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS

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