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STD95NH02LT4 データシート(PDF) 9 Page - STMicroelectronics

部品番号 STD95NH02LT4
部品情報  N-CHANNEL 24V - 0.0039ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD95NH02LT4 データシート(HTML) 9 Page - STMicroelectronics

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STD95NH02L
High Side Switch (SW1)
Low Side Switch (SW2)
conduction
P
δ
*
I
*
R
2
L
DS(on)SW1
)
1
(
*
I
*
R
2
L
DS(on)SW2
δ
switching
P
g
L
I
I
*
f
*
)
Q
(Q
*
V
gd(SW1)
gsth(SW1)
in
+
Zero Voltage Switching
Recovery
Not Applicable
1
f
*
Q
*
V
rr(SW2)
in
diode
P
Conduction
Not Applicable
f
*
t
*
I
*
V
deadtime
L
f(SW2)
)
gate(Q
G
Pf
*
V
*
Q
gg
g(SW1)
f
*
V
*
Q
gg
gls(SW2)
Qoss
P
2
f
*
Q
*
V
oss(SW1)
in
2
f
*
Q
*
V
oss(SW2)
in
Appendix A: Buck Converter Power Losses Estimation
DESCRIPTION
The power losses associated with the FETs in a
Synchronous Buck converter can be estimated us-
ing the equations shown in the table below. The for-
mulas give a good approximation, for the sake of
performance comparison, of how different pairs of
devices affect the converter efficiency. However a
very important parameter, the working temperature,
is not considered. The real device behavior is really
dependent on how the heat generated inside the de-
vices is removed to allow for a safer working junc-
tion temperature.
The low side (SW2) device requires:
- Very low RDS(on) to reduce conduction losses
-Small Qgls to reduce thegatechargelosses
-Small Coss to reduce losses due to output
capaci tance
-Small Qrr to reduce losses on SW1 during its
turn-on
-The Cgd/Cgs ratio lower than Vth/VGG ratio
especially with low drain to source voltage
to avoid the cross conduction phenomenon
The high side (SW1) device requires:
-Small Rg and Ls to allow higher gate current
peak and to limit the voltage feedback on the gate
-Small Qg to have a faster commutation and
to reduce gate charge losses
-Low RDS(on) to reduce the conduction losses
Parameter
Meaning
δ
Duty-Cycle
Qgsth
Post Threshold Gate Charge
Qgls
Third Quadrant Gate Charge
Pconduction
On State Losses
Pswitching
On-off Transition Losses
Pdiode
Conduction and Reverse Recovery Diode Losses
Pdiode
Gate Drive Losses
PQoss
Output Capacitance Losses


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