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2SC1318 データシート(PDF) 1 Page - Panasonic Semiconductor |
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2SC1318 データシート(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Transistors 1 Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 20 V, I E = 0 0.1 µA Collector to 2SC1317 VCBO IC = 10 µA, IE = 030 V base voltage 2SC1318 60 Collector to 2SC1317 VCEO IC = 10 mA, I B = 025 V emitter voltage 2SC1318 50 Emitter to base voltage VEBO IE = 10 µA, I C = 07 V Forward current transfer ratio * 1 hFE1 * 2 VCE = 10 V, I C = 150 mA 85 340 hFE2 VCE = 10 V, IC = 500 mA 40 Collector to emitter saturation voltage * 1 VCE(sat) IC = 300 mA, I B = 30 mA 0.35 0.6 V Base to emitter saturation voltage * 1 VBE(sat) IC = 300 mA, I B = 30 mA 1.1 1.5 V Transition frequency fT VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz Collector output capacitance Cob VCB = 10 V, I E = 0, f = 1 MHz 6 15 pF 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 I Features • Low collector to emitter saturation voltage V CE(sat) • Complementary pair with 2SA719 and 2SA720 I Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector to 2SC1317 VCBO 30 V base voltage 2SC1318 60 Collector to 2SC1317 VCEO 25 V emitter voltage 2SC1318 50 Emitter to base voltage VEBO 7V Peak collector current ICP 1A Collector current IC 500 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C I Electrical Characteristics T a = 25°C ± 3°C Note) *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 1: Emitter 2: Collector 3: Base TO-92 Package Unit: mm 5.0±0.2 0.7±0.1 (1.27) 13 2 2.54±0.15 (1.27) 0.45 +0.15 –0.1 0.45 +0.15 –0.1 4.0±0.2 |
同様の部品番号 - 2SC1318 |
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同様の説明 - 2SC1318 |
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