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SI1402DH データシート(PDF) 2 Page - Vishay Siliconix |
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SI1402DH データシート(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si1402DH Vishay Siliconix New Product www.vishay.com 2 Document Number: 73328 S-50527—Rev. A, 28-Mar-05 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 1.6 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 4.5 V 4 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 3.0 A 0.064 0.077 W Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 2.0 A 0.095 0.120 W Forward Transconductancea gfs VDS = 5 V, ID = 3.0 A 10 S Diode Forward Voltagea VSD IS = 1.05 A, VGS = 0 V 0.80 1.1 V Dynamicb Total Gate Charge Qg 3 4.5 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 2.0 A 0.6 nC Gate-Drain Charge Qgd 1.0 Gate Resistance Rg f = 1.0 MHz 2.4 W Turn-On Delay Time td(on) 5 8 Rise Time tr VDD = 15 V, RL = 15 W 12 23 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 13 23 ns Fall Time tf 7 12 Source-Drain Reverse Recovery Time trr IF = 1 05 A di/dt = 100 A/ms 15 25 Reverse Recovery Charge Qrr IF = 1.05 A, di/dt = 100 A/ms 7.5 12 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
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同様の説明 - SI1402DH |
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