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LM105H データシート(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 LM105H
部品情報  Voltage Regulators
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM105H データシート(HTML) 3 Page - National Semiconductor (TI)

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Electrical Characteristics (Note 2) (Continued)
Parameter
Conditions
LM105
LM305
LM305A
Units
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Feedback Sense Voltage
163
17
181
163
17
181
155
17
185
V
Output Noise Voltage
10 Hz s f s 10 kHz
CREF e 0
0005
0005
0005
%
CREF e 01 mF
0002
0002
0002
%
Standby Current Drain
VIN e 30V TA e 25 C
mA
VIN e 40V
08
20
mA
VIN e 50V
08
20
08
20
mA
Current Limit
TA e 25 C RSC e 10X
225
300
375
225
300
375
225
300
375
mV
Sense Voltage
VOUT e 0V (Note 4)
Long Term Stability
01
01
01
%
Ripple Rejection
CREF e 10 mF f e 120 Hz
0003
0003
0003
%V
iJA
TO-99 Board Mount
230
230
230
CW
in Still Air
iJA
TO-99 Board Mount in
92
92
92
CW
400 LFMin Air Flow
iJC
TO-99
25
25
25
CW
Note 1
The maximum junction temperature of the LM105 and LM305A is 150 C and the LM305 is 85 C For operation at elevated temperatures devices in the
H08C package must be derated based on a thermal resistance of 168 CW junction to ambient or 25 CW junction to case Peak dissipations to 1W are allowable
providing the dissipation rating is not exceeded with the power average over a five second interval for the LM105 and averaged over a two second interval for the
LM305
Note 2
Unless otherwise specified these specifications apply for temperatures within the operating temperature range for input and output voltages within the
range given and for a divider impedance seen by the feedback terminal of 2 kX Load and line regulation specifications are for a constant junction temperature
Temperature drift effects must be taken into account separately when the unit is operating under conditions of high dissipation
Note 3
The output currents given as well as the load regulation can be increased by the addition of external transistors The improvement factor will be roughly
equal to the composite current gain of the added transistors
Note 4
With no external pass transistor
Note 5
Refer to RETS105X Drawing for military specifications for the LM105
3


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