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ST300S20P3 データシート(PDF) 3 Page - International Rectifier

部品番号 ST300S20P3
部品情報  PHASE CONTROL THYRISTORS
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

ST300S20P3 データシート(HTML) 3 Page - International Rectifier

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ST300S Series
3
Bulletin I25158 rev. B 01/94
www.irf.com
Parameter
ST300S
Units Conditions
Switching
µs
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/µs
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST300S
Units Conditions
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
≤ 5ms
P
G(AV)
Maximum average gate power
2.0
T
J = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J = - 40°C
to trigger
mA
T
J
= 25°C
T
J
= 125°C
V
GT
DC gate voltage required
T
J
= - 40°C
to trigger
V
T
J
= 25°C
T
J = 125°C
I
GD
DC gate current not to trigger
10.0
mA
Parameter
ST300S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J = TJ max
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3
1.1
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM anode-to-cathode applied
VT
J
= T
J
max, t
p
≤ 5ms
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
Ω, t
r
≤ 1µs
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
Vd = 0.67% V
DRM
, T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100
Ω, t
p = 500µs
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
1000
A/µs


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