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LM139JAN データシート(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部品番号 LM139JAN
部品情報  Low Power Low Offset Voltage Quad Comparators
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM139JAN データシート(HTML) 7 Page - National Semiconductor (TI)

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LM139
JAN Electrical Characteristics (Continued)
DC Parameters
Drift Values
The following conditions apply, unless otherwise specified.
−V
CC =0V
Delta calculations performed on JAN S product at Group B, Subgroup 5.
Symbol
Parameters
Conditions
Notes
Min
Max
Unit
Sub-
groups
V
IO
Input Offset Voltage
V
CC = 30V,VO = 15V
-1.0
1.0
mV
1
+/- I
Bias
Input Bias Current
V
CC = 30V,RS = 20K
Ω,
V
O = 15V
-15
15
nA
1
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guaranteed specific performance limits. For guaranteed specifications and test conditions, see, the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 20 mA independent of the magnitude of V+.
Note 3: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP
transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action
on the IC chip. This transistor action can cause the output voltages of the comparators to go to the V+ voltage level (or to ground for a large overdrive) for the time
duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns
to a value greater than −0.3 VDC (at 25˚)C.
Note 4: The low bias dissipation and the ON-OFF characteristics of the outputs keeps the chip dissipation very small (PD ≤ 100mW), provided the output transistors
are allowed to saturate.
Note 5: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the outputso
no loading change exists on the reference or input lines.
Note 6: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output
current is approximately 20mA independent of the magnitude of V+
Note 7: Positive excursions of input voltage may exceed the power supply level. As long as the other voltage remains within the common-mode range, the
comparator will provide a proper output state. The low input voltage state must not be less than −0.3 VDC (or 0.3 VDCbelow the magnitude of the negative power
supply, if used) (at 25˚C).
Note 8: S/S RS = 20KΩ, tested at RS = 10KΩ as equivalent test.
Note 9: Calculated parameter; for Delta VIO / Delta T use VIO test at +VCC = 30V, −VCC =0V, VO = 15V; and for Delta IIO / Delta T use IIB test at +VCC = 30V, −VCC
=0V, VO = 15V
Note 10: Datalog of K = V/mV.
Note 11: Human Body model, 1.5 K
Ω in series with 100 pF
Note 12: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (Package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax —TA)/
θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
www.national.com
7


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