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N02M083WL1AD データシート(PDF) 5 Page - NanoAmp Solutions, Inc.

部品番号 N02M083WL1AD
部品情報  2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
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メーカー  NANOAMP [NanoAmp Solutions, Inc.]
ホームページ  http://www.nanoamp.com
Logo NANOAMP - NanoAmp Solutions, Inc.

N02M083WL1AD データシート(HTML) 5 Page - NanoAmp Solutions, Inc.

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The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
Stock No. 23207-01 11/01/02
NanoAmp Solutions, Inc.
N02M083WL1A
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
-40 to +85 oC
Timing
Item
Symbol
2.3 - 3.6 V
2.7 - 3.6 V
Units
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
100
70
ns
Address Access Time
tAA
100
70
ns
Chip Enable to Valid Output
tCO
100
70
ns
Output Enable to Valid Output
tOE
35
35
ns
Chip Enable to Low-Z output
tLZ
15
10
ns
Output Enable to Low-Z Output
tOLZ
10
5
ns
Chip Disable to High-Z Output
tHZ
0300
20
ns
Output Disable to High-Z Output
tOHZ
0300
20
ns
Output Hold from Address Change
tOH
15
10
ns
Write Cycle Time
tWC
100
70
ns
Chip Enable to End of Write
tCW
70
50
ns
Address Valid to End of Write
tAW
70
50
ns
Write Pulse Width
tWP
50
40
ns
Address Setup Time
tAS
00
ns
Write Recovery Time
tWR
00
ns
Write to High-Z Output
tWHZ
30
20
ns
Data to Write Time Overlap
tDW
50
40
ns
Data Hold from Write Time
tDH
00
ns
End Write to Low-Z Output
tOW
10
5
ns


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