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N02M0818L1AD-85I データシート(PDF) 5 Page - NanoAmp Solutions, Inc. |
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N02M0818L1AD-85I データシート(HTML) 5 Page - NanoAmp Solutions, Inc. |
5 / 9 page 5 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. Stock No. 23208-01 11/01/02 NanoAmp Solutions, Inc. N02M0818L1A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load CL = 30pF Operating Temperature -40 to +85 oC Timing VCCQ > or = VCC Item Symbol VCC = 1.4 - 2.3 V VCC = 1.7 - 2.3 V Units Min. Max. Min. Max. Read Cycle Time tRC 150 85 ns Address Access Time tAA 150 85 ns Chip Enable to Valid Output tCO 150 85 ns Output Enable to Valid Output tOE 50 40 ns Chip Enable to Low-Z output tLZ 20 10 ns Output Enable to Low-Z Output tOLZ 20 5 ns Chip Disable to High-Z Output tHZ 0300 15 ns Output Disable to High-Z Output tOHZ 0300 15 ns Output Hold from Address Change tOH 20 10 ns Write Cycle Time tWC 150 85 ns Chip Enable to End of Write tCW 75 50 ns Address Valid to End of Write tAW 75 50 ns Write Pulse Width tWP 50 40 ns Address Setup Time tAS 00 ns Write Recovery Time tWR 00 ns Write to High-Z Output tWHZ 30 15 ns Data to Write Time Overlap tDW 50 40 ns Data Hold from Write Time tDH 00 ns End Write to Low-Z Output tOW 10 5 ns |
同様の部品番号 - N02M0818L1AD-85I |
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同様の説明 - N02M0818L1AD-85I |
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