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N04Q1612C2BT-70C データシート(PDF) 7 Page - NanoAmp Solutions, Inc.

部品番号 N04Q1612C2BT-70C
部品情報  4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K횞16 bit POWER SAVER TECHNOLOGY
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メーカー  NANOAMP [NanoAmp Solutions, Inc.]
ホームページ  http://www.nanoamp.com
Logo NANOAMP - NanoAmp Solutions, Inc.

N04Q1612C2BT-70C データシート(HTML) 7 Page - NanoAmp Solutions, Inc.

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Stock No. 23451-B 2/06
7
The specification is ADVANCE INFORMATION and subject to change without notice.
NanoAmp Solutions, Inc.
N04Q16yyC2B
Advance Information
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
0 to +70oC
Timing
Item
Symbol
-70
-150
Units
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
70
150
ns
Address Access Time
tAA
70
150
ns
Page Mode Address Access Time
tAAP
35
75
ns
Chip Enable to Valid Output
tCO
70
150
ns
Output Enable to Valid Output
tOE
35
75
ns
Byte Select to Valid Output
tLB, tUB
70
150
ns
Chip Enable to Low-Z output
tLZ
10
10
ns
Output Enable to Low-Z Output
tOLZ
55
ns
Byte Select to Low-Z Output
tLBZ, tUBZ
10
10
ns
Chip Disable to High-Z Output
tHZ
0200
20
ns
Output Disable to High-Z Output
tOHZ
0200
20
ns
Byte Select Disable to High-Z Output
tLBHZ, tUBHZ
0200
20
ns
Output Hold from Address Change
tOH
10
10
ns
Write Cycle Time
tWC
70
150
ns
Chip Enable to End of Write
tCW
50
120
ns
Address Valid to End of Write
tAW
50
120
ns
Byte Select to End of Write
tLBW, tUBW
50
120
ns
Write Pulse Width
tWP
40
100
ns
Address Setup Time
tAS
00
ns
Write Recovery Time
tWR
00
ns
Write to High-Z Output
tWHZ
20
20
ns
Data to Write Time Overlap
tDW
40
100
ns
Data Hold from Write Time
tDH
00
ns
End Write to Low-Z Output
tOW
55
ns


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