N08L1618C2AB2 datasheet(1/10 Pages) NANOAMP

部品番号	N08L1618C2AB2

部品情報	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit

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メーカー	NANOAMP [NanoAmp Solutions, Inc.]

ホームページ	http://www.nanoamp.com

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NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N08L1618C2A

(DOC# 14-02-019 REV F ECN# 01-1280)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

Advance Information

8Mb Ultra-Low Power Asynchronous CMOS SRAM

512K × 16bit

Overview

The N08L1618C2A is an integrated memory

device containing a 8 Mbit Static Random Access

Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently and can also be used to

deselect the device. The N08L1618C2A is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

temperature range of -40oC to +85oC and is

available in JEDEC standard packages compatible

with other standard 512Kb x 16 SRAMs

Features

• Single Wide Power Supply Range

1.65 to 2.2 Volts

• Very low standby current

0.5µA at 1.8V (Typical)

• Very low operating current

1.0mA at 1.8V and 1µs (Typical)

• Very low Page Mode operating current

0.5mA at 1.8V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.2V

• Very fast output enable access time

25ns OE access time

• Very fast Page Mode access time

tAAP = 25ns

• Automatic power down to standby mode

• TTL compatible three-state output driver

Pin Configuration

Product Family

Part Number

Package Type

Operating

Temperature

Power

Supply (Vcc)

Speed

Standby

Current (ISB),

Typical

Operating

Current (Icc),

Typical

N08L1618C2AB

48 - BGA

-40oC to +85oC 1.65V - 2.2V

70ns @ 1.8V

85ns @ 1.65V

0.5

µA1 mA @ 1MHz

N08L1618C2AB2

48 - BGA Green

12

34

56

A

LB

OE

A0

A1

A2

CE2

B I/O8 UB

A3

A4

CE1

I/O0

C I/O9 I/O10 A5

A6

I/O1

I/O2

D VSS I/O11 A17 A7 I/O3 VCC

E VCC I/O12 NC A16 I/O4 VSS

F I/O14 I/O13 A14 A15 I/O5 I/O6

G I/O15 NC A12 A13 WE I/O7

H A18 A8

A9

A10

A11

NC

48 Pin BGA (top)

8 x 10 mm

Pin Descriptions

Pin Name

Pin Function

A0-A18

Address Inputs

WE

Write Enable Input

CE1, CE2

Chip Enable Input

OE

Output Enable Input

LB

Lower Byte Enable Input

UB

Upper Byte Enable Input

I/O0-I/O15

Data Inputs/Outputs

VCC

Power

VSS

Ground

NC

Not Connected

同様の部品番号 - N08L1618C2AB2

メーカー	部品番号	データシート	部品情報
NanoAmp Solutions, Inc.	N08L163WC1C	222Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
	N08L163WC1CT1	222Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
	N08L163WC1CT1-55IL	222Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
	N08L163WC2A	250Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit
	N08L163WC2C	241Kb / 9P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

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同様の説明 - N08L1618C2AB2

メーカー	部品番号	データシート	部品情報
ON Semiconductor	N08L6182A	192Kb / 10P	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16bit July 2008 - Rev. 8
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