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CASD501SG データシート(PDF) 1 Page - Cystech Electonics Corp. |
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CASD501SG データシート(HTML) 1 Page - Cystech Electonics Corp. |
1 / 3 page CYStech Electronics Corp. Spec. No. : C336SG Issued Date : 2003.06.01 Revised Date : Page No. : 1/3 CASD501SG CYStek Product Specification CASD501SG Surface Mount Small Signal Schottky Barrier Diodes Features • For surface mounted application • Extremely low VF • Extremely Thin Package • Low Stored Charge • Majority Carrier Conduction Mechanical Data • Case: Molded Plastic, JEDEC SOD-323. • Terminals: Solder plated, solderable per MIL-STD-750 Method 2026 • Polarity: Indicated by cathode band. • Mounting Position : Any. • Weight: 0.0045 gram, 0.000159 ounce Maximum Ratings (Ta=25℃, unless otherwise noted) Parameter Symbol Conditions min typ max unit Repetitive Peak Reverse Voltage VRM 45 V Continuous Reverse Voltage VR 40 V Average Rectified Current IO 100 mA Peak Forward Surge Current IFSM 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 1000 mA Typical Junction Capacitance CD f = 1MHz and applied 10VDC Reverse Voltage 20 pF Operating Temperature Range TJ -40 +125 °C Storage Temperature Range TSTG -40 +125 °C Electrical Characteristics (Ta=25℃, unless otherwise noted) Parameter Symbol Conditions min typ max unit Forward Voltage VF IF = 100mA DC 0.55 V Reverse Leakage Current IR VR = 10V DC 30 µA |
同様の部品番号 - CASD501SG |
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同様の説明 - CASD501SG |
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